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SIB4317EDK-T1-GE3

Name: Vishay SIB4317EDK-T1-GE3
Brand: Vishay / Siliconix
SKU: 781-SIB4317EDKT1-GE3
Price: 0.6 EUR
Availability: InStock

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Mouser No:

781-SIB4317EDKT1-GE3

Mfr. No:

SIB4317EDK-T1-GE3

Mfr.:

Vishay / Siliconix
Vishay / Siliconix

Description:

MOSFETs SC75 P-CH 30V 4.3A

Datasheet:

SIB4317EDK-T1-GE3 Datasheet

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In Stock: 26.188

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,602 €	0,60 €
	0,376 €	3,76 €
	0,242 €	24,20 €
	0,184 €	92,00 €
	0,165 €	165,00 €
Full Reel (Order in multiples of 3000)
	0,128 €	384,00 €
	0,127 €	762,00 €
	0,111 €	999,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SC-75-6
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	4.3 A
Rds On - Drain-Source Resistance:	65 mOhms
Vgs - Gate-Source Voltage:	- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V
Qg - Gate Charge:	6.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.95 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	7 ns, 10 ns
Product Type:	MOSFETs
Rise Time:	10 ns, 20 ns
Series:	SIB
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	23 ns, 25 ns

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Datasheet

SIB4317EDK-T1-GE3 Datasheet

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TARIC:: 8541290000
USHTS:: 8541290095
ECCN:: EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.