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SCT4018KW7TL

Name: ROHM Semiconductor SCT4018KW7TL
Brand: ROHM Semiconductor
SKU: 755-SCT4018KW7TL
Price: 26.47 EUR
Availability: InStock

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Mouser No:

755-SCT4018KW7TL

Mfr. No:

SCT4018KW7TL

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs Transistor SiC MOSFET 1200V 18m 4th Gen TO-263-7L

Datasheet:

SCT4018KW7TL Datasheet

ECAD Model:

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In Stock: 1.156

Stock:: 1.156 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 1156 will be subject to minimum order requirements.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	26,47 €	26,47 €
	22,58 €	225,80 €
	18,99 €	1.899,00 €
Full Reel (Order in multiples of 1000)
	18,64 €	18.640,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	75 A
Rds On - Drain-Source Resistance:	23.4 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	170 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	267 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Fall Time:	11 ns
Forward Transconductance - Min:	22 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	MOSFET's
Product Type:	SiC MOSFETS
Rise Time:	21 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	13 ns
Part # Aliases:	SCT4018KW7

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Datasheet

SCT4018KW7TL Datasheet

Specification Sheets

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TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

SCT4018KW7 N-Ch SiC power MOSFET

ROHM Semiconductor SCT4018KW7 N-Ch SiC power MOSFET offers low on-resistance and a fast switching speed. The SCT4018KW7 is simple to drive and easy to parallel. The device also features lead-free lead plating and is RoHS compliant. ROHM Semiconductor SCT4018KW7 N-Ch SiC power MOSFET is suitable for solar inverters, induction heating, switch mode power supplies, DC/DC converters, and motor drives.