SCT4013DW7TL

ROHM Semiconductor
755-SCT4013DW7TL
SCT4013DW7TL

Mfr.:

Description:
SiC MOSFETs Transistor SiC MOSFET 750V 13m 4th Gen TO-263-7L

Datasheet:
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In Stock: 332

Stock:
332 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
23,99 € 23,99 €
19,75 € 197,50 €
19,57 € 1.957,00 €
Full Reel (Order in multiples of 1000)
19,26 € 19.260,00 €
2.000 Quote
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TO-263-7
N-Channel
1 Channel
750 V
98 A
16.9 mOhms
- 4 V, + 21 V
4.8 V
170 nC
+ 175 C
267 W
Enhancement
Brand: ROHM Semiconductor
Compliance: Done
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Fall Time: 17 ns
Forward Transconductance - Min: 32 S
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: MOSFET's
Product Type: SiC MOSFETS
Rise Time: 32 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 82 ns
Typical Turn-On Delay Time: 17 ns
Part # Aliases: SCT4013DW7
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Attributes selected: 0

Datasheet

Specification Sheets

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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

SCT4013DW7 N-Ch SiC Power MOSFET

ROHM Semiconductor SCT4013DW7 N-Ch SiC Power MOSFET is a 750V, 13mΩ low on-resistance MOSFET designed for fast switching. The SCT4013DW7 offers a fast reverse recovery, is easy to parallel, and is simple to drive. The ROHM SCT4013DW7 is ideal for solar inverters, induction heating, and motor drives.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [RDS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (ID) and source current (IS) (TC=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.

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