VSMY3850-GS08

Vishay Semiconductors
782-VSMY3850-GS08
VSMY3850-GS08

Mfr.:

Description:
Infrared Emitters 60 Degree 17mW/sr 850nm PLCC-2

ECAD Model:
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In Stock: 11.982

Stock:
11.982
Can Dispatch Immediately
On Order:
22.500
Expected 4/29/2026
Factory Lead Time:
10
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 7500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
0,80 € 0,80 €
0,568 € 5,68 €
0,427 € 42,70 €
0,359 € 179,50 €
0,325 € 325,00 €
0,299 € 747,50 €
0,294 € 1.470,00 €
Full Reel (Order in multiples of 7500)
0,278 € 2.085,00 €
0,274 € 6.165,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape
Availability:
In Stock
Price:
0,83 €
Min:
1

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: Infrared Emitters
RoHS:  
SMD/SMT
850 nm
150 mW/sr
100 mA
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Moisture Sensitive: Yes
Product Type: IR Emitters (IR LEDs)
Rise Time: 10 ns
Factory Pack Quantity: 7500
Subcategory: Infrared Data Communications
Tradename: SurfLight
Unit Weight: 83 mg
Products found:
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Attributes selected: 0

TARIC:
8541410000
CNHTS:
8541410090
CAHTS:
8541410000
USHTS:
8541410000
JPHTS:
854141000
MXHTS:
8541410100
BRHTS:
85414011
ECCN:
EAR99

VSMY3850 High-Speed IR Emitting Diode

Vishay Semiconductors VSMY3850 High-Speed IR Emitting Diode offers a peak wavelength of 850nm based on surface emitter technology. This diode features high radiant intensity, high optical power, and high speeds. The VSMY3850 is molded in a PLCC-2 package for surface mounting. Applications for Vishay Semiconductors VSMY3850 High-Speed IR Emitting Diode include IR touch panels, high-speed IR data transmission, 3D TVs, and light curtains.

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters and Silicon PIN Photodiodes feature an 830nm to 950nm wavelength range with high radiant sensitivity from 1mW/sr to 1800mW/sr. These emitters provide double heterojunction infrared emitters with the lowest forward voltages and highly efficient homojunction emitters. The photodiodes offer the broadest selection of high-speed, low-dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.

VSMY High Speed IR Emitting Diodes

Vishay Semiconductors VSMY High Speed IR Emitting Diodes are infrared, 850nm-emitting diodes based on surface emitter technology with high radiant intensity, high optical power, and high speed. Vishay Semiconductors VSMY Series High-Speed IR Emitting Diodes come in four package forms, the PLCC-2, Gull Wing, Reverse Gull Wing, and 0805, all but the first of which are molded in clear, untinted plastic packages. All of these diodes are designed for surface mounting and are suitable for high pulse current operation.

High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.