AFGH4L60T120RWx-STD N-Channel Field Stop VII IGBTs

onsemi AFGH4L60T120RWx-STD N-Channel Field Stop VII IGBTs use the novel field stop 7th generation IGBT technology and a Gen7 diode in a 4-lead package. This 1200V collector-to-emitter (VCES) rated IGBT comes in a TO-247-4LD package. It is rated at 1.66V collector-to-emitter saturation voltage (VCE(SAT)) and a collector current (IC) of 60A. The onsemi AFGH4L60T120RWx-STD offers good performance with low on-state voltage and low switching losses for both hard and soft switching topologies in automotive applications.

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Qty. RoHS ECAD Model Technology
Package/Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
onsemi IGBTs IGBT - Automotive Grade 1200 V 60 A
Datasheet
450In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 1.66 V 30 V 73 A 289 W - 55 C + 175 C AFGH4L60T120RW-STD Tube
onsemi IGBTs IGBT - Automotive Grade 1200 V 60 A, TO-247 4L
Datasheet
450In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 1.2 kV 1.68 V 30 V 73 A 287 W - 55 C + 175 C AFGH4L60T120RWD-STD Tube