CoolSiC™ 440V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 440V G2 Silicon Carbide MOSFETs are designed to bridge the gap between 200V Si trench MOSFETs and 600V Si Super junction (SJ) MOSFETs. These MOSFETs deliver outstanding power density and system efficiency in 2 and 3-level using hard and soft-switching topologies. The CoolSiC™ MOSFETs feature 440V blocking voltage, 4.5V gate threshold voltage, and low RDS(ON) temperature dependency. These MOSFETs combine high robustness with ultra-low switching losses and on-state resistance. Typical applications include power Artificial Intelligence (AI), high-power SMPS for server, datacenter, and telecom rectifiers.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.370In Stock
Min.: 1
Mult.: 1
Reel: 2.000

SiC SMD/SMT HSOF-8 N-Channel 1 Channel 440 V 144 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 429 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.600In Stock
Min.: 1
Mult.: 1
Reel: 2.000

SiC SMD/SMT HSOF-8 N-Channel 1 Channel 440 V 111 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 341 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.591In Stock
Min.: 1
Mult.: 1
Reel: 2.000

SiC SMD/SMT HSOF-8 N-Channel 1 Channel 440 V 68 A 32.1 mOhms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 214 W CoolSiC Reel, Cut Tape