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Qtà RoHS Modello ECAD Tecnologia
Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Nome commerciale
Confezione

STMicroelectronics MOSFET N-Ch 650 Volt 33 Amp
Scheda dati
505A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 33 A 70 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 550V 0.18 Ohm 13A Mdmesh M5
Scheda dati
2.043A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 550 V 13 A 240 mOhms - 25 V, 25 V 3 V 31 nC - 55 C + 150 C 90 W Enhancement MDmesh Tube
STMicroelectronics MOSFET POWER MOSFET N-CH 650V
Scheda dati
1.667A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8.5 A 430 mOhms - 25 V, 25 V 4 V 20 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh V
Scheda dati
959A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 190 mOhms - 25 V, 25 V 4 V 36 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS
Scheda dati
661A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 58 A 45 mOhms - 25 V, 25 V 3 V 143 nC - 55 C + 150 C 330 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5
Scheda dati
1.711A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 42 A 63 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
Scheda dati
1.718A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 30 A 95 mOhms - 25 V, 25 V 3 V 71 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V
Scheda dati
728A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 148 mOhms - 25 V, 25 V 3 V 45 nC - 55 C + 150 C 150 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650V 0.024 Ohm 84A MDMesh M5
Scheda dati
4.235A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 84 A 29 mOhms - 25 V, 25 V 3 V 204 nC - 55 C + 150 C 450 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-CH 65V 12A MDMESH
Scheda dati
5.782A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 279 mOhms - 25 V, 25 V 4 V 31 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
Scheda dati
1.958A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 19 A 95 mOhms - 25 V, 25 V 3 V 71 nC - 55 C + 150 C 35 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
Scheda dati
990A magazzino
2.550In ordine
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 78 mOhms - 25 V, 25 V 3 V 82 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5
Scheda dati
1.372A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 42 A 63 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS
Scheda dati
253A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 58 A 45 mOhms - 25 V, 25 V 3 V 143 nC - 55 C + 150 C 79 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 650 V MDMesh
Scheda dati
558A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 125 mOhms - 25 V, 25 V 3 V 64 nC - 55 C + 150 C 140 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5
Scheda dati
1.205A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18.3 A 110 mOhms - 25 V, 25 V 3 V 62.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650 Volt 33 Amp
Scheda dati
281A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 70 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650 V 0.124 Ohm 22 A MDmesh M5
Scheda dati
1.800A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13.9 A 148 mOhms - 25 V, 25 V 3 V 45 nC - 55 C + 150 C 150 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5
Scheda dati
326A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 42 A 63 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.43 Ohm MDmesh M5 710 VDSS
Scheda dati
881A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9 A 480 mOhms - 25 V, 25 V 3 V 17 nC - 55 C + 150 C 85 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh
Scheda dati
84A magazzino
2.000In ordine
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13.9 A 148 mOhms 30 W MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
Scheda dati
400A magazzino
1.00019/03/2027 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 95 mOhms - 25 V, 25 V 3 V 71 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650V 0.198 Ohm 15A MDmesh FET
Scheda dati
556A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 9.4 A 220 mOhms - 25 V, 25 V 5 V 31 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube

STMicroelectronics MOSFET POWER MOSFET N-CH 650V 22 A
Scheda dati
5A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 22 A 139 mOhms - 25 V, 25 V 5 V 64 nC - 55 C + 150 C 140 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
Scheda dati
54A magazzino
1.20005/02/2027 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 78 mOhms - 25 V, 25 V 3 V 82 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube